luxin-semi · Thyristors & Power Discretes · MPN YGW50N65F1A
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| Pd - Power Dissipation | 312W |
|---|---|
| Td(off) | 180ns |
| Td(on) | 40ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 75pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Vce Saturation(VCE(sat)) | 2.3V@50A,15V |
| Reverse Recovery Time(trr) | 90ns |
| Switching Energy(Eoff) | 1.1mJ |
IGBT 650V 50A Through Hole TO-247