luxin-semi YGW40N65USA1

luxin-semi · Thyristors & Power Discretes · MPN YGW40N65USA1

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Specifications

Td(off)69ns
Pd - Power Dissipation250W
Td(on)13ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)22pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.7V
Vce Saturation(VCE(sat))1.7V;2.2V
Reverse Recovery Time(trr)65ns
Collector Cut-Off Current (Ices)40uA
Switching Energy(Eoff)400uJ

Technical details

250W 80A 650V TO247 Single IGBTs RoHS

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