luxin-semi YGW40N65F1

luxin-semi · Thyristors & Power Discretes · MPN YGW40N65F1

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Specifications

Td(off)120ns
Pd - Power Dissipation188W
Td(on)45ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)40pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@250uA
Vce Saturation(VCE(sat))2.4V@40A,15V
Reverse Recovery Time(trr)75ns
Switching Energy(Eoff)400uJ
Turn-On Energy (Eon)2mJ

Technical details

IGBT 650V 40A Through Hole TO-247

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