luxin-semi YGW40N120T3

luxin-semi · Thyristors & Power Discretes · MPN YGW40N120T3

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Specifications

Td(off)180ns
Pd - Power Dissipation416W
Operating Temperature-40℃~+150℃
Td(on)80ns
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)100pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.2V@250uA
Vce Saturation(VCE(sat))2.15V@40A,15V
Reverse Recovery Time(trr)350ns
Switching Energy(Eoff)1.65mJ

Technical details

IGBT 1.2kV 40A Through Hole TO-247

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