luxin-semi · Thyristors & Power Discretes · MPN YGW10N120T3
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| Pd - Power Dissipation | 260W |
|---|---|
| Td(off) | 55ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 25ns |
| Current - Collector(Ic) | 10A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 25pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@250uA |
| Vce Saturation(VCE(sat)) | 2V@10A,15V |
| Reverse Recovery Time(trr) | 270ns |
| Switching Energy(Eoff) | 500uJ |
IGBT 1.2kV 10A Through Hole TO-247