luxin-semi YGW10N120T3

luxin-semi · Thyristors & Power Discretes · MPN YGW10N120T3

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Specifications

Pd - Power Dissipation260W
Td(off)55ns
Operating Temperature-40℃~+150℃
Td(on)25ns
Current - Collector(Ic)10A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)25pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.2V@250uA
Vce Saturation(VCE(sat))2V@10A,15V
Reverse Recovery Time(trr)270ns
Switching Energy(Eoff)500uJ

Technical details

IGBT 1.2kV 10A Through Hole TO-247

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