luxin-semi YGW100N65FSA1

luxin-semi · Thyristors & Power Discretes · MPN YGW100N65FSA1

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Specifications

Pd - Power Dissipation500W
Td(off)129ns
Operating Temperature-40℃~+150℃
Td(on)46ns
Current - Collector(Ic)100A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)28pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.3V@250uA
Vce Saturation(VCE(sat))2.3V@100A,15V
Reverse Recovery Time(trr)125ns
Switching Energy(Eoff)3.5mJ

Technical details

IGBT 650V 100A Through Hole TO-247

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