luxin-semi · Thyristors & Power Discretes · MPN YGW100N65FSA1
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| Pd - Power Dissipation | 500W |
|---|---|
| Td(off) | 129ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 46ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 28pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@250uA |
| Vce Saturation(VCE(sat)) | 2.3V@100A,15V |
| Reverse Recovery Time(trr) | 125ns |
| Switching Energy(Eoff) | 3.5mJ |
IGBT 650V 100A Through Hole TO-247