luxin-semi YGQ75N120FP

luxin-semi · Thyristors & Power Discretes · MPN YGQ75N120FP

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Specifications

Pd - Power Dissipation735W
Td(off)171ns
Operating Temperature-40℃~+150℃
Td(on)122ns
Current - Collector(Ic)75A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)39.26pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.1V@250uA
Vce Saturation(VCE(sat))1.7V@75A,15V
Reverse Recovery Time(trr)298ns
Switching Energy(Eoff)2.9mJ

Technical details

IGBT 1.2kV 75A Through Hole T0-247

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