luxin-semi YGQ100N65FP

luxin-semi · Thyristors & Power Discretes · MPN YGQ100N65FP

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Specifications

Pd - Power Dissipation500W
Td(off)250ns
Td(on)75ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)100A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)8pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.6V@250uA
Vce Saturation(VCE(sat))2V@100A,15V
Reverse Recovery Time(trr)50ns
Switching Energy(Eoff)3.5mJ
Turn-On Energy (Eon)4mJ

Technical details

IGBT 650V 100A Through Hole TO-247

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