luxin-semi YGF20N65T2

luxin-semi · Thyristors & Power Discretes · MPN YGF20N65T2

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Specifications

Pd - Power Dissipation30.6W
Td(off)60ns
Td(on)20ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)20A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)20pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.4V@250uA
Vce Saturation(VCE(sat))2.05V@20A,15V
Reverse Recovery Time(trr)50ns
Switching Energy(Eoff)100uJ
Turn-On Energy (Eon)470uJ

Technical details

IGBT 650V 20A Through Hole TO-220F

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