luxin-semi · Thyristors & Power Discretes · MPN YGD65N65U1
No reviews yet — be the first to review luxin-semi YGD65N65U1.
| Td(off) | 150ns |
|---|---|
| Pd - Power Dissipation | 272W |
| Td(on) | 40ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 130A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 35pF |
| Input Capacitance(Cies) | 4.82nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.4V@250uA |
| Output Capacitance(Coes) | 365pF |
| Vce Saturation(VCE(sat)) | 2V@65A,15V |
| Switching Energy(Eoff) | 1.6mJ |
272W 130A 650V TO-3P Single IGBTs RoHS