luxin-semi YGD45N65U1

luxin-semi · Thyristors & Power Discretes · MPN YGD45N65U1

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Specifications

Pd - Power Dissipation166W
Td(off)129ns
Td(on)48ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)90A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)38pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@250uA
Vce Saturation(VCE(sat))1.85V@45A,15V
Switching Energy(Eoff)480uJ
Turn-On Energy (Eon)2.2mJ
Input Capacitance(Cies)2.19nF

Technical details

166W 90A 650V TO-3P Single IGBTs RoHS

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