luxin-semi · Thyristors & Power Discretes · MPN YGD45N65U1
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| Pd - Power Dissipation | 166W |
|---|---|
| Td(off) | 129ns |
| Td(on) | 48ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 90A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 38pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Vce Saturation(VCE(sat)) | 1.85V@45A,15V |
| Switching Energy(Eoff) | 480uJ |
| Turn-On Energy (Eon) | 2.2mJ |
| Input Capacitance(Cies) | 2.19nF |
166W 90A 650V TO-3P Single IGBTs RoHS