luxin-semi · Thyristors & Power Discretes · MPN LGM200HF120S4F1A
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| Pd - Power Dissipation | 1.071kW |
|---|---|
| Td(off) | 350ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 160ns |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 1.29nF |
| Input Capacitance(Cies) | 35.16nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@3mA |
| Vce Saturation(VCE(sat)) | 2.4V@200A,15V |
| Gate Charge(Qg) | 900nC@15V,15V |
| Switching Energy(Eoff) | 10.8mJ |
IGBT 1.2kV 200A Screw Terminals