Littelfuse/IXYS · Thyristors & Power Discretes · MPN IXYT55N120A4HV
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| Td(off) | 300ns |
|---|---|
| Pd - Power Dissipation | 650W |
| Td(on) | 23ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 175A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 110nC |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 5.3mJ |
650W 175A 1.2kV TO-268HV Single IGBTs RoHS