Littelfuse/IXYS · Thyristors & Power Discretes · MPN IXXR110N65B4H1
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| Td(off) | - |
|---|---|
| Pd - Power Dissipation | 455W |
| Td(on) | 38ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | PT (Punch-Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 183nC |
| Reverse Recovery Time(trr) | 100ns |
| Switching Energy(Eoff) | 1.05mJ |
| Turn-On Energy (Eon) | - |
455W 650V PT (Punch-Through) TO-247-3 Single IGBTs RoHS