Littelfuse/IXYS · Thyristors & Power Discretes · MPN IXXN110N65C4H1
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| Td(off) | 143ns |
|---|---|
| Pd - Power Dissipation | 750W |
| Td(on) | 35ns |
| Current - Collector(Ic) | 210A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 140pF |
| IGBT Type | PT (Punch-Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.35V@15V,110A |
| Gate Charge(Qg) | 180nC@15V |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Vce Saturation(VCE(sat)) | 2.35V |
| Reverse Recovery Time(trr) | 100ns |
750W 210A 650V PT (Punch-Through) SOT-227B IGBT Modules RoHS