Littelfuse/IXYS · Thyristors & Power Discretes · MPN IXXN110N65B4H1
No reviews yet — be the first to review Littelfuse/IXYS IXXN110N65B4H1.
| Pd - Power Dissipation | 750W |
|---|---|
| Current - Collector(Ic) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 3.65nF@25V |
| IGBT Type | PT (Punch-Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -55℃~+175℃@(Tj) |
750W 650V PT (Punch-Through) SOT-227B IGBT Modules RoHS