Littelfuse/IXYS · Thyristors & Power Discretes · MPN IXGT10N170
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| Pd - Power Dissipation | 110W |
|---|---|
| Td(off) | - |
| Td(on) | - |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@250uA |
| Vce Saturation(VCE(sat)) | 2.7V@10A,15V |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
110W 1.7kV TO-268AA Single IGBTs RoHS