Littelfuse/IXYS · Thyristors & Power Discretes · MPN IXGN82N120C3H1
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| Pd - Power Dissipation | 595W |
|---|---|
| Current - Collector(Ic) | 130A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | PT (Punch-Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.9V@15V,82A |
| Operating Temperature | -55℃~+150℃@(Tj) |
595W 130A 1.2kV PT (Punch-Through) SOT-227B IGBT Modules RoHS