Littelfuse/IXYS · Thyristors & Power Discretes · MPN IXDN75N120
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| Td(off) | 650ns |
|---|---|
| Pd - Power Dissipation | 660W |
| Td(on) | 100ns |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 330pF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.5V |
| Gate Charge(Qg) | 360nC@15V |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Vce Saturation(VCE(sat)) | 2.2V |
| Switching Energy(Eoff) | 10.5mJ |
660W 150A 1.2kV NPT (Non-Punch Through) SOT-227B IGBT Modules RoHS