Littelfuse/IXYS IXDN75N120

Littelfuse/IXYS · Thyristors & Power Discretes · MPN IXDN75N120

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Specifications

Td(off)650ns
Pd - Power Dissipation660W
Td(on)100ns
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)330pF
IGBT TypeNPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6.5V
Gate Charge(Qg)360nC@15V
Operating Temperature-40℃~+150℃@(Tj)
Vce Saturation(VCE(sat))2.2V
Switching Energy(Eoff)10.5mJ

Technical details

660W 150A 1.2kV NPT (Non-Punch Through) SOT-227B IGBT Modules RoHS

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