KTP · Thyristors & Power Discretes · MPN IKW40N65H2-KTP
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| Pd - Power Dissipation | 333W |
|---|---|
| Td(off) | 587ns |
| Td(on) | 108ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@1.5mA |
| Gate Charge(Qg) | 266nC@40A,15V |
| Vce Saturation(VCE(sat)) | 1.65V@40A,15V |
| Reverse Recovery Time(trr) | 129ns |
| Switching Energy(Eoff) | 1.23mJ |
| Turn-On Energy (Eon) | 1.36mJ |
IGBT 650V 80A 333W Through Hole TO-247