JSMSEMI · Thyristors & Power Discretes · MPN S-FGH40N60UFDTU
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| Pd - Power Dissipation | - |
|---|---|
| Td(off) | 104ns |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 20ns |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 67pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.3V@1mA |
| Vce Saturation(VCE(sat)) | 1.95V@40A,15V |
| Collector Cut-Off Current (Ices) | 10uA |
| Reverse Recovery Time(trr) | 188ns |
IGBT 650V 40A Through Hole TO-247-3L