Jilin Sino-Microelectronics · Thyristors & Power Discretes · MPN JT015N065FED
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| Pd - Power Dissipation | 31W |
|---|---|
| Td(off) | - |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | - |
| Current - Collector(Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.5V@250uA |
| Vce Saturation(VCE(sat)) | 1.6V@15A,15V |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
31W 30A 650V TO-220MF Single IGBTs RoHS