JIAENSEMI JNG75T120QCS2

JIAENSEMI · Thyristors & Power Discretes · MPN JNG75T120QCS2

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Specifications

Td(off)762ns
Pd - Power Dissipation694W
Td(on)188ns
Operating Temperature-55℃~+150℃
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)17pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@250uA
Vce Saturation(VCE(sat))2.3V@75A,15V
Reverse Recovery Time(trr)580ns
Switching Energy(Eoff)6.8mJ
Turn-On Energy (Eon)11.7mJ

Technical details

694W 150A 1.2kV TO-247-3LPlus Single IGBTs RoHS

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