JIAENSEMI · Thyristors & Power Discretes · MPN JNG75T120LZS1
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| Td(off) | 875ns |
|---|---|
| Pd - Power Dissipation | 694W |
| Td(on) | 165ns |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 83pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Vce Saturation(VCE(sat)) | 2.2V@75A,15V |
| Reverse Recovery Time(trr) | 476ns |
| Switching Energy(Eoff) | 900uJ |
| Turn-On Energy (Eon) | 1.1mJ |
694W 150A 1.2kV TO264 Single IGBTs RoHS