JIAENSEMI · Thyristors & Power Discretes · MPN JNG60T65HS1
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| Pd - Power Dissipation | 312W |
|---|---|
| Td(off) | 159ns |
| Td(on) | 47ns |
| Current - Collector(Ic) | 120A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 19pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Vce Saturation(VCE(sat)) | 2.7V@60A,15V |
| Reverse Recovery Time(trr) | 808ns |
| Switching Energy(Eoff) | 2mJ |
| Turn-On Energy (Eon) | 3mJ |
| Input Capacitance(Cies) | 2.662nF |
312W 120A 650V TO-247 Single IGBTs RoHS