JIAENSEMI JNG60T65HJU1

JIAENSEMI · Thyristors & Power Discretes · MPN JNG60T65HJU1

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Specifications

Td(off)166ns
Pd - Power Dissipation394W
Td(on)44ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)120A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)30pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Vce Saturation(VCE(sat))1.9V@60A,15V
Reverse Recovery Time(trr)78ns
Switching Energy(Eoff)1.3mJ
Turn-On Energy (Eon)2.3mJ

Technical details

394W 120A 650V TO-247 Single IGBTs RoHS

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