JIAENSEMI · Thyristors & Power Discretes · MPN JNG50T65HJU1
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| Td(off) | 193ns |
|---|---|
| Pd - Power Dissipation | 535W |
| Td(on) | 52ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 37pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA |
| Vce Saturation(VCE(sat)) | 1.8V@50A,15V |
| Reverse Recovery Time(trr) | 82ns |
| Switching Energy(Eoff) | 1mJ |
| Turn-On Energy (Eon) | 1.7mJ |
535W 100A 650V TO-247 Single IGBTs RoHS