JIAENSEMI JNG50T120QMU2

JIAENSEMI · Thyristors & Power Discretes · MPN JNG50T120QMU2

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Specifications

Pd - Power Dissipation833W
Td(off)190ns
Td(on)44ns
Current - Collector(Ic)100A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)55pF
Input Capacitance(Cies)8.408nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.93V@250uA
Output Capacitance(Coes)197pF
Vce Saturation(VCE(sat))1.55V@50A,15V
Reverse Recovery Time(trr)94ns
Switching Energy(Eoff)3.73mJ

Technical details

833W 100A 1.2kV TO-247-3LPlus Single IGBTs RoHS

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