JIAENSEMI · Thyristors & Power Discretes · MPN JNG50T120LIS2
No reviews yet — be the first to review JIAENSEMI JNG50T120LIS2.
| Pd - Power Dissipation | 329W |
|---|---|
| Td(off) | 435ns |
| Td(on) | 94ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 49pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Vce Saturation(VCE(sat)) | 1.8V@50A,15V |
| Reverse Recovery Time(trr) | 1.02us |
| Switching Energy(Eoff) | 3.6mJ |
| Turn-On Energy (Eon) | 4.3mJ |
329W 100A 1.2kV TO264 Single IGBTs RoHS