JIAENSEMI · Thyristors & Power Discretes · MPN JNG50T120HIMU2
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| Pd - Power Dissipation | 833W |
|---|---|
| Td(off) | 190ns |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 44ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 55pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.93V@250uA |
| Vce Saturation(VCE(sat)) | 1.55V@50A,15V |
| Reverse Recovery Time(trr) | 94ns |
| Switching Energy(Eoff) | 3.73mJ |
| Turn-On Energy (Eon) | 2.57mJ |
833W 100A 1.2kV TO-247 Single IGBTs RoHS