JIAENSEMI · Thyristors & Power Discretes · MPN JNG40T65HMU1
No reviews yet — be the first to review JIAENSEMI JNG40T65HMU1.
| Pd - Power Dissipation | 227W |
|---|---|
| Td(off) | 104ns |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 20ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 67pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA |
| Vce Saturation(VCE(sat)) | 1.95V@40A,15V |
| Reverse Recovery Time(trr) | 55ns |
| Switching Energy(Eoff) | 930uJ |
| Turn-On Energy (Eon) | 950uJ |
227W 80A 650V TO-247 Single IGBTs RoHS