JIAENSEMI JNG40T120HS

JIAENSEMI · Thyristors & Power Discretes · MPN JNG40T120HS

No reviews yet — be the first to review JIAENSEMI JNG40T120HS.

Specifications

Pd - Power Dissipation300W
Td(off)158ns
Td(on)87ns
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)30pF
Input Capacitance(Cies)3nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@250uA
Vce Saturation(VCE(sat))2.1V@40A,15V
Output Capacitance(Coes)80pF
Reverse Recovery Time(trr)326ns
Switching Energy(Eoff)2.1mJ

Technical details

300W 80A 1.2kV TO-247 Single IGBTs RoHS

Related Thyristors & Power Discretes