JIAENSEMI JNG40T120HJS1

JIAENSEMI · Thyristors & Power Discretes · MPN JNG40T120HJS1

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Specifications

Td(off)266ns
Pd - Power Dissipation625W
Td(on)42ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)29pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Vce Saturation(VCE(sat))1.7V@40A,15V
Reverse Recovery Time(trr)175ns
Switching Energy(Eoff)1.8mJ
Turn-On Energy (Eon)4mJ

Technical details

625W 80A 1.2kV TO-247 Single IGBTs RoHS

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