JIAENSEMI · Thyristors & Power Discretes · MPN JNG30T65HS1
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| Td(off) | 86ns |
|---|---|
| Pd - Power Dissipation | 297W |
| Td(on) | 19ns |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11.8pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Vce Saturation(VCE(sat)) | 2.5V@30A,15V |
| Reverse Recovery Time(trr) | 148ns |
| Switching Energy(Eoff) | 500uJ |
| Turn-On Energy (Eon) | 1.3mJ |
297W 60A 650V TO-247 Single IGBTs RoHS