JIAENSEMI · Thyristors & Power Discretes · MPN JNG30T65FJS1
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| Pd - Power Dissipation | 50W |
|---|---|
| Td(off) | 151ns |
| Td(on) | 30ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 23pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1mA |
| Vce Saturation(VCE(sat)) | 1.7V@30A,15V |
| Reverse Recovery Time(trr) | 105ns |
| Switching Energy(Eoff) | 600uJ |
| Turn-On Energy (Eon) | 950uJ |
50W 60A 650V TO-247 Single IGBTs RoHS