JIAENSEMI · Thyristors & Power Discretes · MPN JNG30N120HS3
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| Td(off) | 300ns |
|---|---|
| Pd - Power Dissipation | 200W |
| Td(on) | 25ns |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 170pF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Vce Saturation(VCE(sat)) | 2.6V@30A,15V |
| Reverse Recovery Time(trr) | 210ns |
| Switching Energy(Eoff) | 2.33mJ |
200W 50A 1.2kV NPT (Non-Punch Through) TO-247 Single IGBTs RoHS