JIAENSEMI JNG25T65PS1

JIAENSEMI · Thyristors & Power Discretes · MPN JNG25T65PS1

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Specifications

Td(off)75ns
Pd - Power Dissipation139W
Td(on)22ns
Operating Temperature-55℃~+150℃
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)8pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.1V@250uA
Vce Saturation(VCE(sat))2.7V@25A,15V
Reverse Recovery Time(trr)60ns
Switching Energy(Eoff)490uJ
Turn-On Energy (Eon)660uJ

Technical details

139W 50A 650V TO-220 Single IGBTs RoHS

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