JIAENSEMI · Thyristors & Power Discretes · MPN JNG25T65AI
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| Td(off) | 75ns |
|---|---|
| Pd - Power Dissipation | 69.4W |
| Td(on) | 22ns |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 8pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Vce Saturation(VCE(sat)) | 2.7V@25A,15V |
| Reverse Recovery Time(trr) | 60ns |
| Switching Energy(Eoff) | 490uJ |
| Turn-On Energy (Eon) | 660uJ |
69.4W 50A 650V TO-3P Single IGBTs RoHS