JIAENSEMI JNG25T120HS

JIAENSEMI · Thyristors & Power Discretes · MPN JNG25T120HS

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Specifications

Pd - Power Dissipation277W
Td(off)116ns
Operating Temperature-40℃~+155℃
Td(on)47ns
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)65pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@250uA
Vce Saturation(VCE(sat))2.5V@25A,15V
Reverse Recovery Time(trr)252ns
Switching Energy(Eoff)920uJ
Turn-On Energy (Eon)2.09mJ

Technical details

277W 50A 1.2kV TO-247 Single IGBTs RoHS

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