JIAENSEMI JNG25T120HJS1

JIAENSEMI · Thyristors & Power Discretes · MPN JNG25T120HJS1

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Specifications

Pd - Power Dissipation428W
Td(off)184ns
Td(on)31ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)20pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V@1mA
Reverse Recovery Time(trr)309ns
Switching Energy(Eoff)900uJ
Turn-On Energy (Eon)2mJ
Input Capacitance(Cies)2.08nF

Technical details

428W 50A 1.2kV TO-247 Single IGBTs RoHS

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