JIAENSEMI JNG25T120HIRU2

JIAENSEMI · Thyristors & Power Discretes · MPN JNG25T120HIRU2

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Specifications

Pd - Power Dissipation277W
Td(off)235ns
Td(on)35ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)13.7pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.4V@1mA
Vce Saturation(VCE(sat))2.3V@25A,15V
Reverse Recovery Time(trr)248ns
Switching Energy(Eoff)1.64mJ
Turn-On Energy (Eon)1.27mJ

Technical details

277W 50A 1.2kV TO-247 Single IGBTs RoHS

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