JIAENSEMI · Thyristors & Power Discretes · MPN JNG25N120AI
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| Pd - Power Dissipation | 210W |
|---|---|
| Td(off) | 290ns |
| Td(on) | 22ns |
| Current - Collector(Ic) | 45A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 150pF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@0.25mA |
| Vce Saturation(VCE(sat)) | 2.6V@25A,15V |
| Reverse Recovery Time(trr) | 190ns |
| Switching Energy(Eoff) | 1.4mJ |
| Turn-On Energy (Eon) | 2.2mJ |
210W 45A 1.2kV NPT (Non-Punch Through) TO-3P Single IGBTs RoHS