JIAENSEMI JNG20T65PS1

JIAENSEMI · Thyristors & Power Discretes · MPN JNG20T65PS1

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Specifications

Td(off)71ns
Pd - Power Dissipation125W
Td(on)17ns
Operating Temperature-55℃~+150℃
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)7.5pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.1V@250uA
Vce Saturation(VCE(sat))2.5V@20A,15V
Reverse Recovery Time(trr)110ns
Switching Energy(Eoff)410uJ
Turn-On Energy (Eon)460uJ

Technical details

125W 40A 650V TO-220 Single IGBTs RoHS

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