JIAENSEMI · Thyristors & Power Discretes · MPN JNG20T65FS1
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| Pd - Power Dissipation | 40W |
|---|---|
| Td(off) | 71ns |
| Td(on) | 17ns |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 7.5pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Vce Saturation(VCE(sat)) | 2.5V@20A,15V |
| Reverse Recovery Time(trr) | 110ns |
| Switching Energy(Eoff) | 410uJ |
| Turn-On Energy (Eon) | 460uJ |
40W 40A 650V TO-220F Single IGBTs RoHS