JIAENSEMI · Thyristors & Power Discretes · MPN JNG20T65FJS1
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| Td(off) | 120ns |
|---|---|
| Pd - Power Dissipation | 53W |
| Td(on) | 21ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 13pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1mA |
| Vce Saturation(VCE(sat)) | 1.6V@20A,15V |
| Reverse Recovery Time(trr) | 62ns |
| Switching Energy(Eoff) | 460uJ |
| Turn-On Energy (Eon) | 370uJ |
53W 40A 650V TO-220F Single IGBTs RoHS