JIAENSEMI JNG15T65FJS1

JIAENSEMI · Thyristors & Power Discretes · MPN JNG15T65FJS1

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Specifications

Pd - Power Dissipation39W
Td(off)104ns
Td(on)17ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)15pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.4V@1mA
Vce Saturation(VCE(sat))1.6V@15A,15V
Reverse Recovery Time(trr)55ns
Switching Energy(Eoff)270uJ
Turn-On Energy (Eon)300uJ

Technical details

39W 30A 650V TO-220F Single IGBTs RoHS

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