JIAENSEMI JNG15T120HS

JIAENSEMI · Thyristors & Power Discretes · MPN JNG15T120HS

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Specifications

Pd - Power Dissipation108W
Td(off)83ns
Td(on)37ns
Operating Temperature-40℃~+155℃
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)45pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@250uA
Vce Saturation(VCE(sat))2.4V@15A,15V
Reverse Recovery Time(trr)62ns
Switching Energy(Eoff)480uJ
Turn-On Energy (Eon)1.24mJ

Technical details

108W 30A 1.2kV TO-247 Single IGBTs RoHS

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