JIAENSEMI · Thyristors & Power Discretes · MPN JNG15N120AI
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| Td(off) | 260ns |
|---|---|
| Pd - Power Dissipation | 175W |
| Td(on) | 33ns |
| Current - Collector(Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 110pF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Vce Saturation(VCE(sat)) | 2.7V@15A,15V |
| Reverse Recovery Time(trr) | 255ns |
| Switching Energy(Eoff) | 900uJ |
| Turn-On Energy (Eon) | 1.3mJ |
175W 30A 1.2kV NPT (Non-Punch Through) TO-3P Single IGBTs RoHS