JIAENSEMI · Thyristors & Power Discretes · MPN JNG10T65DJS1
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| Pd - Power Dissipation | 100W |
|---|---|
| Td(off) | 71ns |
| Td(on) | 12ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 10pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@250uA |
| Vce Saturation(VCE(sat)) | 2.2V@10A,15V |
| Reverse Recovery Time(trr) | 57ns |
| Switching Energy(Eoff) | 170uJ |
| Turn-On Energy (Eon) | 180uJ |
100W 20A 650V TO-252-2L Single IGBTs RoHS