JIAENSEMI · Thyristors & Power Discretes · MPN GN200HF120T3SS1
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| Pd - Power Dissipation | 1.071kW |
|---|---|
| Td(off) | 527ns |
| Td(on) | 126ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.74nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@12.5mA |
| Vce Saturation(VCE(sat)) | 1.9V@200A,15V |
| Switching Energy(Eoff) | 21.6mJ |
| Turn-On Energy (Eon) | 5.6mJ |
1.071kW 200A 1.2kV FS (Field Stop) Single IGBTs RoHS